Facile fabrication of oxygen-doped carbon nitride with enhanced visible-light photocatalytic degradation of methyl mercaptan

Research on Chemical Intermediates - Element doping has demonstrated an effective strategy for enhancing photocatalytic performance of carbon nitride (CN). Herein, we reported that oxygen-doped CN...     

Geometrically nonlinear dynamic analysis of the stiffened perovskite solar cell subjected to biaxial velocity impacts

Nonlinear Dynamics - The perovskite solar cell (PSC) is one of the most promising photovoltaic candidates along with the highly increasing demand for green electricity. One of the main concerns...     

Pit volume estimation on the stainless steel according to single current transient

Journal of Solid State Electrochemistry - The maximum pit volume is a significant parameter to evaluate the pitting extent on metal materials, which could be associated with the charge transfer...     

Polyvinylpyrrolidone and graphene-modified hematite nanoparticles for efficient electrocatalytic oxidation of p-nitrophenol

Journal of Solid State Electrochemistry - Polyvinylpyrrolidone (PVP) and graphene (G)-modified iron oxides (Fe2O3-PVP-G) are prepared by a simple hydrothermal reaction. Their morphology and...     

In situ confinement of iron-based active sites within high porosity carbon frameworks with enhanced activity for rechargeable Zn–air battery

Non-noble bifunctional electrocatalysts with robust activity and stability toward oxygen evolution reaction (OER) and oxygen reduction reaction (ORR) are greatly significant but challenging for Zn-air batteries. Here, in situ confinement of FeN_x active sites in high porosity carbon framework (FeN_x/CMCC) derived from chelate of carboxymethylcellulose (CMC) and iron ions were synthesized. Particularly, construction of FeN_x within porous carbon framework accelerates the electron transfer and the sufficient utilization of active centers, and then expedites the reaction kinetics of ORR and OER. As expected, the optimized FeN_x/CMCC exhibits superior ORR activity with a larger half-wave potential of 0.869 V. The rechargeable Zn-air battery delivers a higher power density of 99.6 mW/cm² and a special capacity of 781.9 mA h/g_Zn at 10 mA/cm², together with excellent durability of over 335 h. Remarkably, the as-assembled solid-state battery exhibits a higher open circuit voltage (OCV) of 1.5 V, a special capacity of 709.7 mA h/g_Zn, as well as prolonged cycling stability (90 h). Moreover, the flexible solid-state battery displays negligible loss of electrochemical performance under various bending angles, illustrating its potential application in flexible electronic devices.     

改进型单晶炉提拉系统偏心平衡研究

随着光伏行业的快速发展, 对硅单晶的品质和长晶装备的稳定性的要求也不断提高。直拉法是生产硅单晶的主要方法,通过提高单晶炉副室的高度以扩大单晶硅的生产规模。由于副室高度的大幅增加,且单晶炉提拉头质心相对于旋转轴心有一定距离,对单晶炉整体稳定性有较大影响,从而降低了单晶硅的生产质量。针对此问题,对单晶炉建立可靠的力学分析模型,采用数值仿真方法,对单晶炉整体进行动力学响应分析,计算得到副室高度增加后的单晶炉工作时中钨丝绳下端晶棒的运动规律以及最大摆动幅度,为改进设计提供依据。数值仿真分析表明提高单晶炉副室高度后,提拉头较大的质心偏心是单晶炉提拉系统发生摆动的主要原因。在此基础上提出在提拉头上添加质心调节装置,通过控制系统调节可保证提拉头质心位置在旋转轴线上以降低提拉系统的摆动。     

1,3,5-三(羧基甲氧基)苯镍配位聚合物的合成、晶体结构及性质研究

采用溶剂热法,1,3,5-三(羧基甲氧基)苯为定向配体和乙酸镍反应构筑了一个新型的金属配位聚合物[Ni(TB)₂(H₂O)₂]_n·2H₂O,其中H₃TB=1,3,5-三(羧基甲氧基)苯,通过元素分析、IR及X射线单晶衍射对配合物结构进行表征,并研究其荧光性质、热稳定性及Hirshfeld表面作用力。单晶结构分析表明,该配合物属于三斜晶系,空间群$P \overline{1}$,配合物中心离子Ni(Ⅱ)分别与来自两个水分子上的氧原子及四个不同1,3,5-三(羧基甲氧基)苯配体的羧酸氧原子配位,形成六配位的NiO₆八面体构型,并通过与1,3,5-三(羧基甲氧基)苯配体的氧原子配位不断延伸形成具有孔洞结构的一维链状构型。配合物具有良好的荧光性能和热稳定性。Hirshfeld表面作用分析表明配合物分子中O…H/H…O作用占主导且占比为39.0%,而H…H的作用力占比为25.9%,O…O的作用力占比为13.6%。     

Speciation of Chromium Compounds from Zsm-5 into an Ionic Liquid

Journal of Applied Spectroscopy - The speciation of extracted chromium from ZSM-5 into an ionic liquid (IL) was studied using X-ray absorption near-edge structure (XANES) spectroscopy. The main...     

A new direct band gap silicon allotropeο-Si32

Silicon is a preferred material in solar cells,and most of silicon allotropes have an indirect band gap.Therefore,it is important to find new direct band gap silicon.In the present work,a new direct band gap silicon allotrope of o-Si32 is discovered.The elastic constants,elastic anisotropy,phonon spectra,and electronic structure of o-Si32 are obtained using first-principles calculations.The results show that o-Si32 is mechanically and dynamically stable and is a direct semiconductor material with a band gap of 1.261 e V.